ROHM has introduced the BM6GD11BFJ-LB, an isolated gate driver IC specifically engineered to drive high-voltage GaN HEMTs. When paired with GaN devices, this driver ensures stable performance in high-frequency, high-speed switching environments—supporting enhanced miniaturization and efficiency in high-current applications like motors and server power supplies.
Application Examples
- Industrial Equipment: Power supplies for PV inverters, ESS (Energy Storage Systems), communication base stations, servers, and industrial motors
- Consumer Devices: White goods, AC adapters (USB chargers), PCs, TVs, refrigerators, Air Conditioners
With global energy demand on the rise, energy conservation has become a common priority worldwide. Motors and power supplies are estimated to consume around 97% of the world’s electricity. Improving the efficiency of these systems increasingly relies on wide bandgap technologies like SiC and GaN, which enable more efficient control and conversion of electrical energy.
Building on its expertise in isolated gate driver ICs for silicon and SiC devices, ROHM has launched its first dedicated solution for GaN technology—the BM6GD11BFJ-LB. This new IC is the first in a lineup of isolated gate drivers optimized for GaN devices. By isolating the power device from the control circuitry during high-speed switching with rapid voltage transitions, the IC ensures safe and reliable signal transmission.
The BM6GD11BFJ-LB incorporates ROHM’s proprietary on-chip isolation technology, which minimizes parasitic capacitance and supports high-frequency operation up to 2 MHz. This fully leverages the fast-switching characteristics of GaN devices, enhancing energy efficiency and system performance while reducing board space by shrinking the size of peripheral components.
In addition, the IC offers an improved Common-Mode Transient Immunity (CMTI) of 150 V/ns—1.5 times higher than previous products—helping to prevent malfunctions caused by the steep voltage slopes typical of GaN HEMT switching. The minimum pulse width has also been reduced to just 65 ns, a 33% improvement over conventional solutions. These enhancements enable stable, high-frequency operation with better duty cycle control and reduced power loss.
With a gate drive voltage range of 4.5V to 6.0V and an isolation voltage of 2500Vrms, the BM6GD11BFJ-LB is engineered to support a wide variety of high-voltage GaN devices—including ROHM’s newly released 650V EcoGaN™ HEMT. Its industry-leading low output-side current consumption of just 0.5mA (max) helps reduce standby power, contributing to greater overall system efficiency.
Looking ahead, Japanese ROHM plans to offer integrated gate driver ICs alongside its GaN device lineup, streamlining application design and accelerating the adoption of GaN solutions.
Terminology
Common-Mode Transient Immunity (CMTI)
A key parameter of isolated gate drivers, CMTI refers to the driver’s ability to withstand rapid voltage changes that occur over very short durations. This is especially important when driving high slew rate devices such as GaN HEMTs, where rapid voltage transitions are common. A gate driver with high CMTI can prevent device damage while reducing the risk of circuit shorts.
Source: rohm.com/news