Toshiba Electronic Devices & Storage Corporation and SICC Co., Ltd. have signed a memorandum of understanding (MOU) to explore collaboration in enhancing the performance and quality of silicon carbide (SiC) power semiconductor wafers manufactured by SICC. The agreement also covers the stable supply of high-quality wafers from SICC to Toshiba. Both companies will define the scope of their cooperation and areas of mutual support.
SiC power semiconductors, which can operate in high-temperature environments such as electric vehicles and renewable energy systems, are expected to see rising demand amid growing efficiency requirements and carbon-neutrality goals.
Power semiconductors play a vital role in converting and managing electrical power, making them essential for reducing energy consumption across a wide range of electronic and electrical devices, as well as for achieving carbon neutrality. Demand for these devices continues to rise in line with higher efficiency requirements, particularly for SiC-based power semiconductors that can withstand high temperatures and are increasingly used in electric vehicles and renewable energy systems. However, ensuring both reliability and consistent quality remains a key challenge alongside efficiency gains.
Toshiba has a strong track record in the development, manufacturing, and commercialization of SiC power semiconductors for railway applications and is now accelerating development for areas such as automotive and server power supplies. The company is focused on minimizing power losses while improving device reliability and efficiency in future high-performance power conversion systems. To achieve these goals, Toshiba sees collaboration with a leader in SiC wafer technology as essential. Partnering with SICC—a global pioneer in SiC wafer development and mass production—will support optimized solutions for diverse applications and drive business growth.
Since its establishment in 2010, SICC has specialized in the development and production of single-crystal SiC wafers. Guided by its focus on quality and innovation, the company ranks among the global top five in SiC-related patents. Following its 2022 IPO—the first in China dedicated to SiC—SICC has expanded its business worldwide and grown its market presence. In 2024, it introduced the world’s first 12-inch SiC wafer, and in 2025, announced 12-inch wafers across all product categories, including n-type, semi-insulating, and p-type. Looking ahead, SICC aims to further advance wafer quality and reliability in line with semiconductor manufacturers’ needs, while contributing to the growth of the SiC power semiconductor market through continuous innovation.
Source: toshiba.semicon-storage.com